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Picosecond laser microfabrication of infrared antireflective functional surface on As2Se3 glass
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摘要
采用紫外皮秒激光在As2Se3玻璃表面以线扫描形式快速制备大面积周期性点阵式增透微结构，获得了红外透光性能提高的硫系玻璃样品。研究确定了As2Se3玻璃的激光刻蚀阈值，并研究设计了合适线扫描工艺方法。所制样品相对于原样在波长11.0μm~12.4μm范围内，透过率平均提高10.0%；波长13.0μm~14.2μm范围内，透过率平均提高5.2%。激光扫描制备方法没有破坏样品表面原有的浸润性，整个制备过程均在空气开放环境下进行，成本低，工艺可控性强，效率高，制备8mm×8mm的表面微结构，仅用时3.65s，且表面微结构单元尺寸及间距可按材料应用需求调控。分析表明，当激光能量较低时，对该硫系玻璃的去除以“冷加工”为主，不会有明显的热效应，得到微结构的硫系玻璃表面元素组成未发生改变；激光能量较高时，会存在一定的热效应，使得刻蚀点出现熔融态，在微坑边缘出现凸起或翻边。
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关键词:
- 皮秒激光 /
- As2Se3硫系玻璃 /
- 表面微结构 /
- 增透 /
- 接触角
Abstract
Large-scale periodic dot matrix anti-reflective microstructures were fabricated on the surface by using UV picosecond laser with rapid line scanning to improve the infrared transmittance of As2Se3 glass. In the study, the laser ablation threshold of As2Se3 glass was concluded and the optimal line scanning method was designed. The transmittance of the fabricated chalcogenide glass increased about 10.0 % and 5.2% in wavelength ranged from 11.0 μm~12.4 μm and 13.0 μm~14.2 μm, respectively. In addition, the wettability of the glass was not damaged by laser scanning. The processing was carried out in air condition showing low cost, high controllability and high efficiency. It only took 3.65 s to finish the fabrication of 8 mm×8 mm surface structures. Both the size and space of the surface microstructure unit can be controlled according to the application requirement. The removal of the chalcogenide glass induced by laser was mainly based on "cold fabrication" in which no obvious thermal effects inducing the element change on the surface were observed. Higher laser energy could induce obvious thermal effect resulting in melting of the ablation points and bump of the crater edges.
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Key words:
- picosecond laser /
- As2Se3 chalcogenide glass /
- surface micro-structure /
- antireflection /
- contact angle
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Overview
Chalcogenide glasses are formed of chalcogen of S, Se, Te with doping of a certain of other metal elements. Due to the lower refractive index, temperature coefficient and good infrared transmittance, it has been recognized as the ideal materials for a new generation temperature non-refrigerated infrared optical system. In order to decrease the large reflection losses, researches on multi-layer thin-film coatings for anti-reflection (AR) with good performance were performed. However, disadvantages of the method are needed to be overcome, such as high costs and short lifetimes. Recently, surface micro-structures have been shown to be a good alternative potential to multi-layer thin-film AR coatings in many infrared and visible-band applications.
Large-scale periodic dot matrix anti-reflective microstructures were fabricated on the surface by using UV picosecond laser with rapid line scanning to improve the infrared transmittance of As2Se3 glass. In the study, the laser ablation threshold of As2Se3 glass was concluded and the optimal line scanning method was designed. The transmittance of the fabricated chalcogenide glass increased about 10.0 % and 5.2 % in wavelength ranged from 11.0 μm~12.4 μm and 13.0 μm~14.2 μm, respectively. In addition, the static contact angles of the treated samples were increased from 71° to 84° of the untreated ones, which means there was no significant change in the wettability. The processing was carried out in air condition showing low cost, high controllability and high efficiency. Since the ultra-short pulse laser duty ratio is very small, the laser rapid scanning can be used to achieve single-pulse point by point processing on the sample surface. It only took 3.65 s to finish the fabrication of 8 mm×8 mm surface structures. Both the size and space of the surface microstructure unit can be controlled according to the application requirement. The morphology of the surface microstructure is controllable by changing the laser parameters (single pulse energy, defocus, etc.) and interval depends on the laser scanning speed, laser pulse frequency and scanning path. The removal of the chalcogenide glass induced by laser was mainly based on "cold fabrication" in which no obvious thermal effects inducing the element change on the surface were observed. Higher laser energy could induce obvious thermal effect resulting in melting of the ablation points and bump of the crater edges. The results can be provided as a guide for the laser rapid fabrication of anti-reflection micro-structure, which is suitable for the applications in infrared optical material and other optical materials in a low-cost and controllable way.
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图 3 表面微结构制备方法示意图. (a)激光扫描路径. (b)脉冲输出方式. (c)三维示意图.
Figure 3. Schematic of the preparation of surface microstructures. (a) Path of laser scanning. (b) Mode of pulse output. (c) Three-dimensional schematic of the experimental process.
图 4 不同平均功率下单脉冲烧烛微坑形貌.
Figure 4. Ablation morphology of crater with single pulse under different average powers.
图 5 不同平均功率下单脉冲烧烛微坑三维形貌. (a) P=0.02 W. (b) P=0.10 W. (c) P=0.50 W. (d) P=0.90 W.
Figure 5. Ablation of three-dimensional morphology of crater with single pulse with different average power. (a) P=0.02 W. (b)P=0.10 W. (c) P=0.50 W. (d) P=0.90 W.
图 6 (a) 微坑直径与平均功率关系. (b)微坑直径平方与平均功率对数关系.
Figure 6. (a) The relationship between ablation point diameter and average power. (b) The relationship between ablation point diameter and average power.
图 7 (a) 不同相离率Ur1微坑形貌. (b)相离率Ur1与扫描速度v1关系. (c)不同相离率Ur2微坑形貌. (d)相离率Ur2与跳转距L离关系.
Figure 7. (a) Ablation morphology of crater with different Ur1. (b) The relationship between Ur1 and scanning speed v1. (c) Ablation morphology of crater with different Ur2. (d) The relationship between Ur2 and jump distance L.
图 9 As2Se3玻璃刻蚀微结构前后红外光透过率.
Figure 9. Infrared radiation transmittance of the As2Se3 glass before and after ablating microstructure on single surface.
图 10 As2Se3玻璃原样与刻蚀样品能谱图. (a)玻璃原样. (b)刻蚀样品.
Figure 10. EDS of polished and ablated on As2Se3 glass. (a) Polished glass. (b) Ablated glass.
图 11 As2Se3玻璃未制备与制备微结构区域的表面静态接触角. (a)未刻蚀区域. (b)刻蚀区域.
Figure 11. Static contact angles of non–prepared and prepared microstructure zones on As2Se3 glass. (a) Non–prepared zones.(b) Prepared zones.
表 1 As2Se3玻璃基本特征参数.
Table 1. Basic parameters of As2Se3 glasses.
密度/(g/cm3) 膨胀系数/(×10-6/K) 转变温度/(℃) 比热/(J/kg) 热导率/(W/mK) 色散(参考值） 折射率 折射率温度系数(参考值) 4.16±0.01 20.7±0.1 (30℃-100℃) 185±5 0.33 0.24 168(4.0 μm) 2.795(4.0 μm) 30×10-6/K(3.4 μm) 161(10.6μm) 2.778(10.6 μm) 36×10-6/K(10.6 μm) 
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