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摘要:
紫外激光以其波长短、加工精度高、冷加工等特性，在微细制造中具有独特优势，能够有效提高制造品质。近年来，随着现代电子产业的快速发展，其对生产制造的要求不断提高，紫外激光的应用和发展也受到人们的广泛关注。紫外激光在微加工过程中对材料尺寸形状要求小，加工过程灵活可变，产生的热影响区小，能够实现精密复杂结构的加工。本文介绍了紫外激光器的发展过程，并对目前主要用于微加工的两类紫外激光器：准分子激光器和全固态激光器的工作原理和技术特点进行了简要的概述。重点讨论紫外激光在半导体、光学元件和聚合物等领域的技术发展和应用现状，并进一步对未来研究方向进行预测和展望。
Abstract:Ultraviolet (UV) laser has unique advantages in micromachining due to short wavelength, high machining accuracy and cold processing property, leading to improve manufacturing quality effectively. In recent years, electronic industry has been developed rapidly and needs high fabrication requirements. Progress of UV laser has attracted much attention in applications of electronic industry because it can produce complex structures on almost any materials with flexible process and small heat-affected zone. In this review, we summarize the history of UV laser development and fundamental principles as well as characteristics of excimer laser and diode pumped solid state laser, which are two major UV lasers used for micromachining. Moreover, we analyze the development and applications of UV laser in micromachining of semiconductor, optical element and polymer. Finally, we propose some prospects for further research and development in UV laser and its applications.
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Key words:
- UV laser /
- laser micromachining /
- semiconductor /
- micro-optical element /
- polymer
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Ultraviolet(UV) laser with its short wavelength, high machining accuracy and cold processing property, has unique advantages in micromachining, and can effectively improve the manufacturing quality. Modern electronic industry has achieved a rapid development in recent years, and sets higher demands in fabricating. UV laser’s progress and applications in electronic industry attracts are attracting broad attention. UV laser can process complex structures on almost any materials with flexible process and small heat-affected zone. It summarizes the development of UV laser. The fundamental principles and characteristics of excimer laser and diode pumped solid state laser are given, which are two major UV lasers used for micromachining. The development and applications of UV laser in the micromachining of semiconductor, optical element and polymer are introduced. It gives some prospects and forecasts about research in the further development.
According to different actuating mediums, UV lasers used for micro-machining are majorly classified into two categories, excimer laser and diode pumped solid state laser. The noble gases and halogen elements work as actuating medium in excimer laser. Under the excitation of high-energy electrons, the noble gas atom and halogen element atom combine into excimer. When these excited atoms return to the ground state, it emits energy of a characteristic wavelength. The wavelengths of excimer laser can vary from 126 nm (Ar2) to 650 nm (Xe2F). While in the diode pumped solid state laser, the photons generate from the diode. The origin photons are transmitted into the photonic crystal, where photons excite more photons of fundamental wavelength, which compose fundamental light. Then fundamental light penetrates into the nonlinear frequency doubling crystal, and changes into the second harmonic light with wavelength halved. After several frequency transformations, the origin light finally becomes the expected light of an ultraviolet wavelength.
During the process of laser machining, UV laser carries on processing to materials using the photochemical effects. When UV laser irradiates on the surface of materials, part of photons are absorbed by the electrons of surface. Owing to UV laser’s single photon energy higher than that of chemical bonds between material atoms, the chemical bonds can be directly broken in irradiated area. The materials can be stripped from the surface in the form of gaseous atom or particle, to compete presupposed micro-machining. UV laser has been widely used in the fields of semiconductor, optical element and polymer, for its small heat-affected zone and high machining precision. Application status and developing prospects of UV laser are discussed in this review.
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图 2 全固态激光器光路原理图.
Figure 2. Schematic diagram of optical path in diode pumped solid state laser.
图 3 中国科学院研发的深紫外固态激光源实用化样机.
Figure 3. A prototype of deep UV solid state laser source developed by Chinese academy of sciences.
表 1 Nd:YAG和Nd:YVO4的主要物理性质.
Table 1. The main physical properties of Nd:YAG and Nd:YVO4
晶体 Nd:YAG Nd:YVO4 受激发射截面/(10-20·cm2) 4.3 4.8(∥C)， 4.3(⊥C) 荧光寿命/μs 230 97 吸收截面/(10-20·cm2) 7.9 60.1(∥C)， 12.0(⊥C) 热导率/(W·m-1·K-1) 11 5.23(∥C)， 5.10(⊥C) 
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表 2 LBO和KTP的部分物理性质.
Table 2. Partial physical properties of LBO and KTP.
晶体 LBO KTP 光学透过波长范围/nm 160～2600 350～3500 非线性系数/(pm/V) d31=1.05 d33=13.7 激光损伤阈值/(GW/cm2) 18.9 4.6
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