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摘要
本文提出了一种基于投影光刻技术的微透镜阵列制备方法,成功制备多种口径、面形及表面粗糙度均良好的微透镜阵列。该方法采用0.2倍投影物镜,降低掩模板制造成本,实现不同口径微透镜阵列制备。采用掩模移动滤波技术,在降低掩模制备复杂性的同时,提高了微透镜阵列面形精度。本文对四种不同口径的微透镜阵列进行制备实验,分别为50 μm、100 μm、300 μm、500 μm,其表面形貌加工精度达到微米级,表面粗糙度达到纳米级。实验结果表明,该方法在微透镜阵列制造中具有很大的潜力,与传统方法相比,能够实现更低的线宽和更高的表面面形精度。
Abstract
A method for preparing microlens arrays based on projection lithography was proposed, and microlens arrays of various calibers and different surface roughness were successfully prepared by the method. The method employs a 0.2× projection objective lens to reduce the manufacturing cost of masks and realize the preparation of microlens arrays with different calibers. We achieve superior surface figure accuracy while reducing the complexity of mask preparation by employing a projection-based mask-shift filtering technique. Four kinds of microlens arrays with different calibers, 50 μm, 100 μm, 300 μm and 500 μm, were prepared. The machining accuracy of the surface morphology reaches the sub-micron level and the surface roughness reaches the nanometer level. The experimental results show that this method has great potential in the fabrication of microlens arrays, and can achieve lower line width and higher surface profile accuracy than traditional methods.
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Overview
Overview: As a typical microoptical component, a microlens array has the advantages of high optical diffraction efficiency, good dispersion performance and a large degree of freedom, and is widely used in many fields such as biomedicine, photonics, communication and sensors. The feature size of microlens arrays has been reduced to the submicron level, increasing manufacturing difficulty with the rapid development of information technology. The traditional lithography technology is mainly used for the fabrication of planar two-dimensional structures, but it can not meet the high precision manufacturing requirements of microlens arrays. Among them, the proximity/contact lithography, as a typical micro and nano machining technology, is limited by resolution, and it is difficult to ensure the requirements of sub-micron machining accuracy and freedom. Therefore, efficient micro and nano machining methods are the key to fabricating high-precision microlens arrays. A method for preparing microlens arrays based on projection lithography was proposed, and Microlens arrays of various calibers and different surface roughness were successfully prepared by the method. The projection lithography technology is an imaging system that increases the reduction magnification between the mask and the substrate, so that the mask and the substrate are separated, and the exposure requirements of the bottom line are achieved while reducing the difficulty and cost of mask preparation. The method employs a 0.2× projection objective lens to reduce the manufacturing cost of masks and realize the preparation of microlens arrays with different calibers. We achieve superior surface figure accuracy while reducing the complexity of mask preparation by employing a projection-based mask-shift filtering technique. Four kinds of microlens arrays with different calibers, 50 μm, 100 μm, 300 μm and 500 μm, were prepared. The machining accuracy of the surface morphology reaches the sub-micron level and the surface roughness reaches the nanometer level. The experimental results show that this method has great potential in the fabrication of microlens arrays, and can achieve lower line width and higher surface profile accuracy than traditional methods.
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图 2 投影式掩模移动滤波法原理。(a)等分目标函数; (b)微条形区域轮廓;(c)所有分割区域掩模图形的组合;(d) 投影式掩模移动曝光后的微图形结构
Figure 2. Principle of mask moving filtering based on projection lithography. (a) The equally divided objective function; (b) Microstrip area outline function; (c) The divided feature pattern; (d) Micrographic structure after exposure
图 4 两种加工方法的掩模图形。(a-d)基于接近式光刻掩模移动方法的掩模图形,口径分别为50 μm、100 μm、300 μm、500 μm;(e-h)基于投影光刻掩模移动方法的掩模图形,口径分别为250 μm、500 μm、1500 μm、2500 μm
Figure 4. Mask graphics of two processing methods. (a-d) Mask patterns based on proximity lithography mask moving method, with diameters of 50 μm, 100 μm, 300 μm and 500 μm, respectively; (e-h) Mask patterns based on the projection lithography mask movement method, with diameters of 250 μm, 500 μm, 1500 μm, 2500 μm, respectively
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