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摘要
局域表面等离子体共振是一种改善光电探测器性能的有效方法。本文为了提高beta-氧化镓(β-Ga2O3)薄膜金属-半导体-金属(MSM)日盲紫外探测器的性能，提出了在beta-氧化镓薄膜表面利用快速热退火的方法形成分散的铝纳米粒子(Al-NPs)，增强薄膜对光的吸收。运用此方法制备的Al-NPs/β-Ga2O3探测器不仅降低了暗电流，同时也提升了光响应度和探测率。在波长254 nm紫外光照、10 V偏压下，该器件的光响应度达到了2.7 A/W，探测率达到了1.35×1014 cm·Hz1/2·W-1，与β-Ga2O3探测器相比，分别提升了1.5倍和2倍。
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关键词:
- 局域表面等离子体共振 /
- 铝纳米粒子 /
- beta-氧化镓 /
- 日盲紫外探测器
Abstract
Localized surface plasmon resonance (LSPR) provides an effective approach to further improve the performance of photodetectors. In this work, we introduce the Al nanoparticles (Al-NPs) on the surface of β-Ga2O3 thin film by rapid thermal annealing in order to improve the performance of β-Ga2O3 solar-blind ultraviolet photodetectors Al nanoparticles arrays, which can not only decrease the dark current but also enhance the responsivity and specific detectivity. As a result, the responsivity of β-Ga2O3-based metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetectors with Al-NPs can reach 2.7 A/W, and the specific detectivity can reach 1.35×1014 cm·Hz1/2·W-1 under the 254 nm radiation and 10 V bias. Both parameters are more than 1.5 times and 2 times higher than those without Al nanoparticles, respectively.
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Overview
Overview: In recent years, Ultraviolet (UV) detectors have wide applications in civil and military areas, such as missile early warning systems, flame detection, environmental monitoring, optical communication and UV radiation calibration and monitoring and so on, so it has attracted considerable an amount of research interests. UV is an electromagnetic radiation with a wavelength from 10 nm to 400 nm. It is commonly subdivided into three regions: UVA (400 nm~315 nm), UVB (315 nm~280 nm) and UVC (280 nm~10 nm). However it is almost completely absorbed by the stratospheric ozone layer and can't reach Earth, and hence UVC is also named as solar-blind UV.
Many kinds of wide bandgap semiconductors, including ZnMgO, diamond, AlGaN, Ga2O3 (α, β, γ, δ, ε) etc., have been developed and applied on fabrication of solar-blind UV photodetectors. Among these wide bandgap semiconductor, β-Ga2O3 is particularly suitable for solar-blind photo-detection due to its wide band gap of 4.9 eV. In addition, β-Ga2O3 possesses high chemical and thermal stability. At present, it was reported that lots of high performances β-Ga2O3 solar-blind UV photodetector were prepared. Oshima T et al. successfully realized the growth of mono-crystal β-Ga2O3 thin films on c-plane sapphire substrate by MBE and metal-semiconductor-metal (MSM) solar-blind UV photo-detector. Guo et al improved performance of solar-blind UV photo-detector, such as reducing dark current, higher responsivity and sensitivity, by in situ annealing the as-grown film in oxygen atmosphere. Qian et al significantly enhanced the detectivity (D*) of β-Ga2O3 solar-blind UV photo-detector by thermal-annealing pretreatment on c-plane sapphire substrates. However, in order to further reduce dark current and increase responsivity and detectivity, researchers still need to explore and perfect continually.
Recently, localized surface plasmon resonance (LSPR) supported by metal nanoparticles provides a new method to enhance the properties of β-Ga2O3 solar-blind UV photodetector. Noble metal nanoparticles have been widely employed in various optoelectronic devices. For instance, the properties of β-Ga2O3 solar-blind UV photodetector were improved by using gold (Au) nanoparticles, but Au just achieves LSPR in the visible region. Besides, aluminum (Al) can excite LSPR from 200 nm to just below 800 nm and its position of the LSPR excitation maximum is sensitive to the size, shape, inter-particle spacing, dielectric environment and dielectric properties of the nanoparticle. So Al is capable of achieving LSPR in the solar-blind region and being applied to solar-blind UV photo-detector. In this work, it is investigated that the effect on both the Al nanoparticles and the characteristics of related photodetector. It is revealed that the performance of β-Ga2O3 solar-blind UV photodetector with Al nanoparticles is effectively improved.
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图 1 MSM日盲紫外探测器结构示意图
Figure 1. The schematic illustration of the MSM solar-blind ultraviolet photodetector
图 2 β-Ga2O3薄膜SEM图。(a)表面无铝纳米粒子的β-Ga2O3薄膜；(b)厚度10 nm的铝层快速热退火形成的铝纳米粒子以及粒子直径分布直方图(插图)
Figure 2. Top view FE-SEM images of β-Ga2O3 thin film with and without Al-NPs. (a) β-Ga2O3 thin film without Al-NPs; (b) β-Ga2O3 thin film with Al-NPs arrays fabricated by annealing 10 nm-thickness Al thin film and particle size histogram (inset).
图 3 表面有无铝纳米粒子β-Ga2O3薄膜的紫外-可见光吸收光谱
Figure 3. UV/vis absorption spectra of β-Ga2O3 with and without Al-NPs
图 4 表面有无铝纳米粒子β-Ga2O3薄膜MSM日盲紫外探测器的电流-电压特性曲线。(a)无紫外光照下的电流-电压特性；(b) 254 nm, 34 μW/cm2紫外光照下的电流-电压特性
Figure 4. The current-voltage (Ⅰ-Ⅴ) of the β-Ga2O3-based MSM solar-blind photodetectors with and without Al-NPs. (a) The dark current characteristics; (b) The photocurrent characteristics (254 nm, 34 μW/cm2)
图 5 表面有无铝纳米粒子β-Ga2O3薄膜MSM日盲紫外探测器的瞬态响应特性。(a)探测器件多个周期瞬态响应；(b)探测器件单个周期归一化瞬态响应；(c)器件β-Ga2O3上升和衰减过程的实验数据和拟合曲线；(d)器件Al-NPs/β-Ga2O3上升和衰减过程的实验数据和拟合曲线
Figure 5. Transient response of the β-Ga2O3-based MSM Solar-blind photodetectors with and without Al-NPs. (a) Transient response for multicycles; (b) Normalized transient response; (c) Experimental and fitted curves of the rise and decay processes for β-Ga2O3 PD; (d) Experimental and fitted curves of the rise and decay processes for Al-NPs/β-Ga2O3 PD
图 6 表面有无铝纳米粒子β-Ga2O3薄膜MSM日盲紫外探测器在对数坐标下的光谱响应特性和线性坐标下归一化的光谱响应特性(插图)
Figure 6. Spectral response of the β-Ga2O3-based MSM Solar-blind photodetectors with and without Al-NPs on a logarithmic scale and normalized spectral response at a linear scale (inset)
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