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摘要:
2 μm~5 μm波段GaSb基VCSEL对大气检测技术有着重要的应用，但制备技术的不成熟严重制约着GaSb基VCSEL的发展。刻蚀工艺中出现的下切效应就是器件制备中存在的突出问题。针对上述问题，选择三种不同成分的磷酸系刻蚀液进行了对比性刻蚀实验，并通过台阶仪、扫描电子显微镜(SEM)测试观察了刻蚀速率和表面形貌。实验分析表明，浓度配比为1 mL:1 mL:0.6 g:10 mL的H3PO4:H2O2:C4H6O6:H2O刻蚀液具有良好的腐蚀效果，消除了以往腐蚀过程中出现的下切效应，且垂直形貌好，未出现钻蚀现象，晶片表面平整且光滑，且保持稳定的刻蚀速率0.62 μm/min，为激光器制备提供了良好的前期实验基础。
Abstract:2 μm~5 μm GaSb-based VCSEL is an ideal light source for atmospheric detection. However, the immaturity of its fabrication technology seriously hinders its development. The undercutting effect is the outstanding etch problem in its fabrication. In this paper, Etching characteristics of GaSb is investigated in detail by use of phosphoric acid plus tartaric acid solution. In order to compare them, we chose concentration ratio of H3PO4:H2O2:C4H6O6:H2O as 1 mL: 1 mL: 0.3 g: 10 mL, 1 mL: 1 mL: 0.6 g: 10 mL, and 1 mL: 1 mL: 1 g: 10 mL, respectively. The testing results from step profiler and scanning electron microscopy (SEM) were compared and analyzed. Etched GaSb in the solution with a concentration ratio of H3PO4:H2O2:C4H6O6:H2O=1:1:0.6:10 shows very good morphology. Undercutting effect was eliminated and a vertical side wall was obtained with no lateral etching. Etching rate is 0.62 μm/min. The perfect etch behavior of GaSb provides a good technical support for laser preparation.
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Key words:
- Gallium Antimonide /
- VCSEL /
- etching rate /
- surface morphology /
- tartaric acid
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2 μm5 μm mid-infrared vertical cavity surface emitting laser (VCSEL), featured with advantages of low power consumption, small divergence angle, no astigmatism circular spot, high modulation bandwidth, wavelength stability,low production cost, and high density ultra-small dimensional packaging, is an ideal light source for the molecular spectrum measurement, biochemical testing, laser radar, thermal imaging and medical diagnosis. For example, in the TDLAS (tunable laser diode absorption spectroscopy test) system for monitoring polluting gases CO, CH4, NH3 and HF, the use of VCSEL as a light source will greatly reduce the complexity and the cost for no beam shaping and easily coupled packaging, and shrink the size of the system. Furthermore, its modulation rate can reach several tens of Gbit/s, so it is considered to be the best alternative device of distributed feedback (DFB) laser in the future. As the GaSb material can cover the entire mid-infrared band, it is the best material system for the development of 2 μm5 μm mid-infrared VCSEL.
GaSb-based VCSEL has become a hot concern over the world because of its promising application. However the immaturity of its fabrication processes seriously hinders its development. E.g., owing to its easily oxidized properties that make etching GaSb not a easy thing, etch process is one of the most key technologies in preparing a GaSb-based VCSEL.
In the previous etching experiments, only the effect of hydrofluoric acid plus tartaric acid etching solution on the corrosion rate was explored, but the surface morphology of the substrate and the undercutting effect was not well analyzed. Etching characteristics of GaSb is investigated in detail by use of phosphoric acid plus tartaric acid solution. In order to compare them, we chose concentration ratio of H3PO4:H2O2:C4H6O6:H2O as 1 mL: 1 mL: 0.3 g: 10 mL, 1 mL: 1 mL: 1 g: 10 mL, and 1 mL: 1 mL: 0.6g: 10 mL, respectively. In order to prevent the corrosion rate of the viscous reaction product formed on the GaSb surface during the etching process, the sample is continuously immersed in the etching solution by a magnetic stirrer to assist in obtaining a constant etching rate.
The experimental results were characterized through scanning electron microscopy (SEM) and so on, and the testing results were compared and analyzed. Etched GaSb in the third group solution (H3PO4:H2O2:C4H6O6:H2O=1:1:0.6:10) shows very good morphology: undercutting effect was eliminated and a vertical side wall was obtained with no lateral etching. Etching rate is 0.62 μm/min. The perfect etch behavior of GaSb provides a good preliminary experimental basis for laser preparation.
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图 1 不同浓度配比溶液中腐蚀深度与时间的关系曲线.
Figure 1. The depth vs. time under different concentration ratio solution.
图 2 P1刻蚀后的样品剖面图及刻蚀表面形貌
Figure 2. Cross-sectional view and corrosion surface of sample with P1.
图 3 P2刻蚀后的样品剖面图及刻蚀表面形貌.
Figure 3. Cross-sectional view and corrosion surface of sample with P2.
图 4 P3刻蚀后的样品剖面图及刻蚀表面形貌.
Figure 4. Cross-sectional view and corrosion surface of sample with P3.
表 1 腐蚀液浓度配比.
Table 1. Concentration ratio of corrosive solution.
No. Concentration ratio of corrosive solution P1 H3PO4:H2O2:C4H6O6:H2O=1:1:0.3:10 P2 H3PO4:H2O2:C4H6O6:H2O=1:1:1:10 P3 H3PO4:H2O2:C4H6O6:H2O=1:1:0.6:10 
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