能谷电子学新进展：单层WS<sub>2</sub>中的K-Q谷间三重子发光

doi:10.12086/oee.2023.231012.h03

光电工程

能谷电子学新进展：单层WS₂中的K-Q谷间三重子发光

文章导航 > 光电工程 > 2023 Vol. 50 > No. 12 > 231012

能谷电子学新进展：单层WS2中的K-Q谷间三重子发光[J]. 光电工程, 2023, 50(12): 231012. doi: 10.12086/oee.2023.231012.h03

引用本文:

能谷电子学新进展：单层WS₂中的K-Q谷间三重子发光[J]. 光电工程, 2023, 50(12): 231012. doi: 10.12086/oee.2023.231012.h03

Switching of K-Q intervalley trions fine structure in n-doped monolayer WS2[J]. Opto-Electronic Engineering, 2023, 50(12): 231012. doi: 10.12086/oee.2023.231012.h03

Citation:

Switching of K-Q intervalley trions fine structure in n-doped monolayer WS₂[J]. Opto-Electronic Engineering, 2023, 50(12): 231012. doi: 10.12086/oee.2023.231012.h03