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摘要:
二氧化硅(SiO2)是光学系统中最常用光学薄膜材料之一，其微观结构、缺陷等信息对于研究和提高薄膜的性能具有重要作用。本文通过电子束蒸发、离子辅助、磁控溅射方法制备SiO2薄膜并进行测试，计算出其吸收边光谱，对吸收边光谱的强吸收区、e指数区、弱吸收区进行分段分析得到SiO2薄膜的带隙宽度、带尾能量和氧空位缺陷含量数据。进一步分析三种薄膜和其在常规退火温度下的带隙宽度、带尾能量和氧空位缺陷含量的数据，获得SiO2薄膜的微观原子排列结构、微观缺陷信息，并对不同镀膜技术和不同退火温度下SiO2薄膜的原子排列结构、微观缺陷的差异和变化进行了分析和讨论。
Abstract:Silicon dioxide (SiO2) is one of the most widely used in various optical system as film material. The micro-structure and defects of SiO2 films are of great importance to the functions and performance of these optical systems. In this paper, the absorption edge characteristics of single layer SiO2 films prepared by electron beam evaporation, ion assisted deposition, and magnetron sputtering are investigated in detail via calculating their absorption edge spectrum, which is divided into three regions: the strong absorption, exponential absorption, and weak absorption regions. The bandgap, Urbach tail, and concentration of oxygen deficiency centers (ODC) are obtained by analyzing the measured absorption spectrum. By analyzing the bandgap, Urbach tail, and ODC data of SiO2 films prepared with different deposition techniques and annealed at different temperatures, the atomic arrangement as well as micro-defect information of SiO2 films are obtained and compared. Such information of SiO2 films are important to the preparation of high-performance optical coatings employing SiO2 as the low refractive index material.
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Key words:
- SiO2 film /
- bandgap /
- Urbach tail energy /
- oxygen deficiency centers
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Overview: Silicon dioxide (SiO2) is one of the most widely used in various optical system as film material. The micro-structure and defects of SiO2 films are of great importance to the functions and performance of these optical systems. The absorption edge spectrum of thin film was calculated by measuring the ultraviolet spectrum curve of SiO2 thin film sample. By analyzing and calculating the strong absorption, exponential absorption, and weak absorption regions in the absorption edge spectrum of SiO2 thin film, the data of the bandgap, Urbach tail energy, and concentration of oxygen deficiency centers ODC(I) can be obtained. Based on the relationship of these experimental data to thin film micro-structure and defects, information about the atomic arrangement structure and microscopic defects of SiO2 thin film can be learned. In this paper, SiO2 films were prepared by electron beam evaporation, ion assisted deposition and magnetron sputtering. The data of the bandgap, Urbach tail energy, and ODC(I) content of raw films and films annealed at different temperatures were obtained by measurement, calculation and analysis. These data are used to understand the atomic arrangement structure and microscopic defects of SiO2 films prepared by different coating technologies and at different annealing temperatures. The structural disorder in electron beam evaporation SiO2 films is the most serious, followed by the magnetron sputtering SiO2 films, and the ion assisted deposition SiO2 films have the least structural disorder. Conventional annealing temperatures treatment cannot reduce the structural disorder of SiO2 film, and the structural disorder of all the films is much more serious than that of bulk quartz glass. The SiO2 films prepared by these deposition techniques are non-stoichiometric, and the electron beam evaporation SiO2 films are the most severe non-stoichiometric ones. Ion assisted deposition can significantly reduce the non-stoichiometric of SiO2 films. Annealing can also reduce the non-stoichiometric of SiO2 films. The defect of ODC(I) is the most in electron beam evaporation SiO2 film, and the least in ion assisted deposition SiO2 film. Annealing can significantly reduce the ODC(I) of electron beam evaporation SiO2 film. The best performances of the structural disorder, non-stoichiometric and ODC(I) content of SiO2 films were achieved by ion assisted deposition. Thermal annealing could not change the structural disorder of SiO2 films, but it preferred to improve stoichiometry and decrease ODC(I) defects in SiO2 films. Such information of SiO2 films are important to the preparation of high-performance optical coatings employing SiO2 as the low refractive index material.
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图 1 三种SiO2薄膜和基片的透射光谱
Figure 1. The transmittance spectra of three SiO2 films samples and the substrate
图 3 IAD沉积SiO2薄膜测试和计算透射曲线
Figure 3. The measured and calculated transmittance spectra of IAD SiO2 film samples
图 4 三种SiO2薄膜和基片的吸收谱
Figure 4. The absorption spectra of three SiO2 film samples and the substrate
图 6 IAD沉积SiO2薄膜的带尾能量拟合
Figure 6. The fit of Urbach tail for SiO2 film deposited with IAD
图 7 SiO2薄膜样品中氧空位吸收系数和高斯拟合
Figure 7. The absorption and corresponding Guass fit of oxygen deficiency center in SiO2 films
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