基于铁磁薄膜可调谐太赫兹微结构的研究

章强,张晓渝,邢园园,等. 基于铁磁薄膜可调谐太赫兹微结构的研究[J]. 光电工程,2020,47(6):190447. doi: 10.12086/oee.2020.190447
引用本文: 章强,张晓渝,邢园园,等. 基于铁磁薄膜可调谐太赫兹微结构的研究[J]. 光电工程,2020,47(6):190447. doi: 10.12086/oee.2020.190447
Zhang Q, Zhang X Y, Xing Y Y, et al. Tunable terahertz structure based on the ferromagnetic film[J]. Opto-Electron Eng, 2020, 47(6): 190447. doi: 10.12086/oee.2020.190447
Citation: Zhang Q, Zhang X Y, Xing Y Y, et al. Tunable terahertz structure based on the ferromagnetic film[J]. Opto-Electron Eng, 2020, 47(6): 190447. doi: 10.12086/oee.2020.190447

基于铁磁薄膜可调谐太赫兹微结构的研究

  • 基金项目:
    国家自然科学基金资助项目(61107093);苏州市低维光电材料与器件重点实验室(SZS201611);江苏省十三五重点学科项目(20168765);江苏省高等学校自然科学研究项目(19KJA140001);苏州科技大学研究生科研创新计划项目(SKCX18_Y13)
详细信息
    作者简介:

    章强(1994-),男,硕士研究生,主要从事微纳结构远红外滤波器的调控研究。E-mail: 1224052592@qq.com

    通讯作者: 张晓渝(1978-),男,博士,副教授,主要从事基于半导体材料和铁性薄膜材料微波-远红外光电器件的调控机理研究和器件研制。Zhang E-mail:xyzhang@usts.edu.cn
  • 中图分类号: TB872

Tunable terahertz structure based on the ferromagnetic film

  • Fund Project: Supported by National Natural Science Foundation of China (61107093), Suzhou Key Laboratory for Low Dimensional Optoelectronic Materials and Devices (SZS201611), Jiangsu Key Disciplines of Thirteen Five-Year Plan (20168765), Natural Science Foundation of the Jiangsu Higher Education Institutions of China (19KJA140001), and the Graduate Research and Practice Innovation Project of USTS (SKCX18_Y13)
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  • 通常的太赫兹微结构主要采用Au薄膜制备金属结构,很难利用微结构中Au薄膜性能对太赫兹波进行实时调控。本文设计并制备了基于高磁导率软磁FeNHf薄膜的太赫兹开口三角形结构,通过外磁场调控微结构中软磁薄膜磁化强度方向,系统研究了外磁场调控下微结构中的太赫兹波传输特性和电磁共振模式。软磁FeNHf薄膜具有磁各向异性的特点,外磁场可以调控磁化强度M方向分别垂直和平行于太赫兹波磁场的方向,采用太赫兹时域光谱系统测试微结构的太赫兹透射特性,通过时域有限差分的方法,分析了基于软磁薄膜微结构的太赫兹场电磁场分布和调制机理。实验结果表明,外磁场可调控开口三角形太赫兹微结构的谐振频率,在1.3 THz频段,调谐率约为5.7%,调制深度约为15%。

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  • 图 1  (a) 超材料结构的实验照片;(b) TDS测试和非对称三角形结构尺寸示意图

    Figure 1.  (a) Experimental photographs of metamaterial structures; (b) Schematic of THz TDS measurement and geometry of the asymmetric triangular structures

    图 2  FeNHf薄膜轮廓图和表面形貌图

    Figure 2.  FeNHf film thickness and surface morphology

    图 3  FeNHf薄膜。(a)磁滞回线;(b)复数磁导率与频率曲线

    Figure 3.  Characterizations of FeNHf film. (a) Hysteresis loop of FeNHf film; (b) Frequency dependence of complex permeability

    图 4  样品的THz透射率。(a) FeNHf薄膜和Au薄膜结构的实验结果;(b) FeNHf薄膜结构的模拟结果

    Figure 4.  THz transmissivity of samples based on FeNHf film and Au film. (a) Experiments; (b) Simulations

    图 5  d峰位在磁化强度M分别平行和垂直H时,磁性薄膜结构在(a) fr=1.26 THz,(b) fr=1.33 THz的电场分布;(c) fr=1.26 THz,(d) fr=1.33 THz的磁场分布

    Figure 5.  (a), (b) Distributions of the electric field in the structure at (a) fr=1.26 THz, (b) fr=1.33 THz; (c), (d) Distribution of the magnetic field in the structure at (c) fr=1.26 THz, (d) fr=1.33 THz. Peak d is when magnetization M is parallel and perpendicular to terahertz magnetic field H, respectively

    表 1  太赫兹微结构各谐振峰数据

    Table 1.  The resonance frequency of THz microstructures

    Resonance points FeNHf microstructures Au microstructures
    Experiments/THz Simulations/THz Resonance points Experiments/THz
    M//H MH Δfr M//H MH Δfr
    a1, 2 0.175 0.177 0.002 0.250 0.253 0.003 a3 0.218
    b1, 2 0.632 0.641 0.009 0.751 0.804 0.053 b3 0.668
    c1, 2 0.902 0.947 0.045 0.974 1.071 0.097 c3 0.982
    d1, 2 1.103 1.166 0.063 1.259 1.325 0.066 d3 1.209
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出版历程
收稿日期:  2019-07-28
修回日期:  2019-11-04
刊出日期:  2020-06-01

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